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PD-96973
RADIATION HARDENED IRHMB57Z60 POWER MOSFET 30V, N-CHANNEL THRU-HOLE (Tabless - Low-Ohmic TO-254AA) 5 TECHNOLOGY
Product Summary
Part Number Radiation Level IRHMB57Z60 100K Rads (Si) IRHMB53Z60 300K Rads (Si) IRHMB54Z60 600K Rads (Si) IRHMB58Z60 1000K Rads (Si) RDS(on) ID 0.0045 45A* 0.0045 45A* 0.0045 45A* 0.0045 45A*
Tabless Low-Ohmic TO-254AA
International Rectifier's R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 45* 45* 180 208 1.67 20 1250 45 20.8 1.08 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
300 (0.063 in. /1.6 mm from case for 10s) 8.0 (Typical)
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03/08/05
IRHMB57Z60
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
30 -- -- 2.0 73 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.03 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.0045 4.0 -- 10 25 100 -100 240 60 55 35 175 80 40 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 45A A VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 45A A VDS = 24V ,VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 45A VDS = 15V VDD = 15V, ID = 45A VGS =12V, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad
Ciss Coss Crss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance
-- -- -- --
8884 4334 270 0.73
-- -- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 45* 180 1.2 140 350
Test Conditions
A
V ns C Tj = 25C, IS = 45A, VGS = 0V A Tj = 25C, IF = 45A, di/dt 100A/s VDD 25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 0.60 0.21 -- -- 48 C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHMB57Z60
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source On-State A Resistance (Low-Ohmic TO-254) Diode Forward Voltage A Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 30 2.0 -- -- -- -- -- -- -- 4.0 100 -100 10 0.0040 0.0045 1.2 30 1.5 -- -- -- -- -- -- -- 4.0 100 -100 25 0.0045 0.0050 1.2 V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS= 24V, VGS = 0V VGS =12V, ID = 45A VGS =12V, ID = 45A VGS = 0V, IS = 45A
1. Part numbers IRHMB57Z60 , IRHMB53Z60 and IRHMB54Z60 2. Part number IRHMB58Z60
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Cu Br I LET MeV/(mg/cm2)) 28 37 60 Energy (MeV) 261 285 344 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 40 30 30 30 25 15 37 30 30 30 23 15 33 25 25 20 15 8
35 30 25 20 15 10 5 0 0 -5 -10 VGS -15 -20
Cu Br I
VDS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHMB57Z60
Pre-Irradiation
1000
VGS TOP 15V 12V 10V 8.0V 6.0V 5.0V 4.5V BOTTOM 4.0V
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
VGS 15V 12V 10V 8.0V 6.0V 5.0V 4.5V BOTTOM 4.0V TOP
10
4.0V 10
1
4.0V 60s PULSE WIDTH Tj = 25C
60s PULSE WIDTH Tj = 150C 1 0.1 1 10 100
0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 45A
1.5
ID, Drain-to-Source Current (A)
100
T J = 150C
T J = 25C 10
1.0
0.5
1 4 4.5
VDS = 15V 15 60s PULSE WIDTH 5 5.5 6
VGS = 12V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHMB57Z60
16000 14000 12000
VGS, Gate-to-Source Voltage (V)
100KHz VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd
C oss = C ds + C gd
20 ID = 45A 16 VDS = 24V VDS = 15V
C, Capacitance (pF)
10000 8000 6000 4000 2000 0 1
Ciss Coss
12
8
4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 40 80 120 160 200 240 280 320
Crss
10 100
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
100 TJ = 150C 10
T J = 25C
OPERATION IN THIS AREA LIMITED BY R DS(on)
100
100s
1 VGS = 0V 0.1 0.0 0.4 0.8 1.2 1.6 VSD , Source-to-Drain Voltage (V)
1ms Tc = 25C Tj = 150C Single Pulse 0 1 10 10ms 100
10
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRHMB57Z60
Pre-Irradiation
160
LIMITED BY PACKAGE
VDS VGS
RD
ID , Drain Current (A)
120
RG VGS
D.U.T.
+
-V DD
80
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
40
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05
P DM t1
0.01
0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
t2
0.001
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHMB57Z60
4000
EAS , Single Pulse Avalanche Energy (mJ)
15V
3200
ID 20.1A 28.5A BOTTOM 45A TOP
VDS
L
DRIVER
2400
RG
D.U.T.
IAS tp
+ - VDD
A
1600
VGS 20V
0.01
Fig 12a. Unclamped Inductive Test Circuit
800
0
25
50
75
100
125
150
V(BR)DSS tp
Starting TJ , - Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS
QGD
VGS
3mA
D.U.T.
+ V - DS
VG
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHMB57Z60
Pre-Irradiation
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 25V, starting TJ = 25C, L= 1.1 mH Peak IL = 45A, VGS = 12V A ISD 45A, di/dt 150A/s, VDD 30V, TJ 150C 12 volt V GS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 24 volt V DS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- Tabless - Low-Ohmic TO-254AA
0.13 [.005] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249]
13.84 [.545] 13.59 [.535] 1 2 3
B
C
17.40 [.685] 12.95 [.510]
0.84 [.033] MAX.
3X 3.81 [.150] 2X
NOT ES:
1.14 [.045] 0.89 [.035] 0.36 [.014] BA
3.81 [.150]
1. 2. 3. 4.
DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA.
PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/2005
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